Samsung Electronics, a provider of advanced memory technology, today announced that it has begun mass producing a 1 terabit (Tb) eighth-generation Vertical NAND (V-NAND) triple-level cell (TLC) with the highest bit density in the world. sector. At 1TB, the new V-NAND also features the largest storage capacity to date, enabling greater storage space in next-generation enterprise server systems around the world.
“As market demand for denser, higher-capacity storage drives higher V-NAND layer counts, Samsung has adopted its advanced 3D scaling technology to reduce surface area and height while avoiding cell-to-cell interference. cell that normally occurs with downscaling. ,” said SungHoi Hur, executive vice president of Flash product and technology at Samsung Electronics. “Our eighth-generation V-NAND will help meet growing market demand and better position us to deliver more differentiated products and solutions that will underpin future storage innovations.”
Samsung was able to achieve the highest bit density in the industry by significantly increasing bit productivity per wafer. Based on the Toggle DDR 5.0 interface – the latest NAND flash standard – Samsung's eighth-generation V-NAND features an input and output (I/O) speed of up to 2.4 gigabits per second (Gbps), an increase of 1.2X compared to the previous generation.
This will allow the new V-NAND to accommodate the performance requirements of PCIe 4.0 and later PCIe 5.0.
Eighth-generation V-NAND is expected to serve as the basis for storage configurations that help expand storage capacity in next-generation enterprise servers, while also extending its use into the automotive market, where reliability is especially critical. .
