Innoscience apresenta a família de CIs GaN HEMT integrados de 700 V para aplicações USB-PD

Innoscience Introduces Family of 700V Integrated GaN HEMT ICs for USB-PD Applications

Innociência announced a family of four new integrated devices that combine GaN HEMT power, driver, current sensing and other functions in a single industry-standard 6x8mm QFN package. 700V ISG610x SolidGaN devices cover the 140mΩ to 450mΩ range and save PCB space and BOM count while increasing efficiency and simplifying design for applications including USB-PD chargers, LED lighting, and AC/DC power supplies and PFC, QR flyback, ACF, and LLC converters.

The new integrated devices feature a wide voltage range of 9V-80V DC range which is beneficial in USB-PD applications requiring up to 28V output. Competitive devices that have a limited input voltage of 30V require an external high-voltage LDO or multiple discrete components to achieve an output greater than 15V. Innoscience's new SolidGaN parts can easily cover USB-PD output voltage requirements without external LDO or other parts, saving BOM costs and board area.

For low-power operation, the ISG610x family ICs also feature a low quiescent current of 115 µA, thanks to an innovative automatic sleep mode that activates when the PWM signal voltage remains low for a certain period of time. During this time, most internal circuits are turned off, drastically reducing energy waste and allowing devices to meet no-load standby power specifications from regulatory bodies like ENERGYSTAR.

The lossless current sensing with 7% accuracy of the new SolidGaN devices offers several benefits. Firstly, because current sensing resistor loss is eliminated, a larger RDS (on) can be accommodated without loss of performance, leading to cost savings. Secondly, the component count is reduced and the PCB footprint is minimized.

The devices also feature a programmable switch activation slew rate to enable EMI reduction. An internal linear voltage regulator is included to ensure a tightly regulated 6.5V driver supply, maximizing the GaN HEMT current capacity while ensuring GaN HEMT reliability. Finally, integrated undervoltage lockout (UVLO), overcurrent protection (OCP), and overheat protection (OTP) are built into the IC.

A demo board, INNDAD120B1, is available, describing a quasi-resonant flyback power supply with 90V ~ 264V AC input and 5V/3A, 9V/3A, 12V/3A, 15V/3A, 20V/6A output (120W peak) .

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