Megatrends, including digitalization, urbanization and electromobility, equate to an increase in energy consumption. At the same time, energy efficiency is more important than ever.
Infineon Technologies is responding to these megatrends and related demands by offering a new family of CoolSiC 650V silicon carbide (SiC) MOSFETs to deliver reliable, easy-to-use and cost-effective superior performance. The devices are based on Infineon's cutting-edge SiC trench technology and come in a compact D-form 2 7-pin PAK SMD package with .XT interconnect technology.
They target a variety of high-power applications, including servers, telecommunications, industrial SMPS, electric vehicle fast charging, motor drives, solar power systems, energy storage and battery formation.
The new products offer better switching behavior at higher currents and 80% lower reverse recovery charge (Q rr ) and drain source charge (Q oss ) than the best silicon reference. Reduced switching losses enable high-frequency operations in smaller systems, enabling greater efficiency and power density.
Trench technology is the basis for superior gate oxide reliability. Together, with improved robustness against avalanches and short circuits, this ensures the highest system reliability even in harsh environments. SiC MOSFETs are suitable for topologies with difficult and repetitive switching as well as harsh, high-temperature operations. Thanks to a very low resistance (R DS(activated) ) temperature dependence they exhibit excellent thermal behavior.
Featuring a wide gate-to-source voltage (V GS ) range from -5 to 23 V and supporting 0 V GS turn-off and a gate-to-source threshold voltage (V GS(º) ) greater than 4 V, the new family also Works with standard MOSFET gate driver ICs.
Additionally, the new products support bidirectional topologies and full dv/dt controllability, offering reduced system costs and complexity, as well as ease of adoption and integration. .XT interconnect technology significantly improves the thermal capabilities of the package. Up to 30% extra loss can be dissipated compared to a standard interconnect. With ten new products, the Infineon D 2 7-pin PAK portfolio of SiC MOSFETs is the most granular on the market.
