Infineon introduces its new generation of 1200V CoolSiC MOSFETs in TO263-7 for automotive applications. Automotive-grade silicon carbide (SiC) MOSFET generation delivers high power density and efficiency, enables bi-directional charging, and significantly reduces system cost in on-board charging (OBC) and DC-DC applications.
The 1200V CoolSiC family member delivers best-in-class switching performance through 25% lower switching losses compared to the first generation. This improvement in switching behavior allows for high-frequency operation, leading to smaller systems and greater power density.
With a gate source threshold voltage ( V GS(º) ) greater than 4 V and a low C rsrs/ C iss ratio, reliable shutdown at V GS = 0 V is achieved without the risk of parasitic activation. This allows unipolar conduction, resulting in reduced system cost and complexity.
Furthermore, the new generation features low resistance (R DS(activated) ), reducing conductive losses across the entire temperature range from -55° to 175° C.
Advanced diffusion soldering chip assembly technology (.XT technology) significantly improves the thermal capabilities of the package, reducing the SiC MOSFET junction temperature by 25% compared to the first generation.
Additionally, the MOSFET has a creepage distance of 5.89mm, meeting 800V system requirements and reducing plating stress. Infineon is offering a line of R DS(enabled) options to meet diverse application demands, including the only 9 mΩ type in the TO263-7 package currently on the market.
KOSTAL uses CoolSiC MOSFET
KOSTAL Automobil Elektrik has designed Infineon's latest CoolSiC MOSFET on its next-generation OBC platform for Chinese OEMs. KOSTAL is a leading global supplier of automotive charger systems. With its standard platform approach, safe, reliable and highly efficient products are supplied worldwide for various OEM requirements and global regulations.
“Decarbonization is the great challenge of this decade and, therefore, a great motivation to shape automotive electrification with our customers. Therefore, we are very proud to partner with KOSTAL,” said Robert Hermann, vice president of automotive high voltage chips and discretes at Infineon. “This project highlights the strong position of our standard product portfolio in the onboard charger market, enabled by cutting-edge SiC technology.”
“As a key component for our future-generation OBC platform, Infineon's new 1200V CoolSiC Trench MOSFET features high voltage rating and qualified robustness. These benefits help us create a compatible design to manage our state-of-the-art technical solutions, cost optimization and massive market delivery,” added Shen Jianyu, Vice President and Technical Executive Manager of KOSTAL ASIA.
