Infineon Technologies is expanding its 7th generation TRENCHSTOP IGBT family with the 650V IGBT7 H7 discrete variant. The devices feature a compact EC7 diode with an advanced emitter-controlled design and high-speed technology to meet the growing need for power solutions highly efficient and environmentally conscious.
Using the latest micropattern trenching technology, the TRENCHSTOP IGBT7 H7 offers excellent control and performance, resulting in significant loss reduction, increased efficiency and increased power density.
As a result, the device is ideal for diverse applications such as string inverters, energy storage systems (ESS), electric vehicle charging applications and traditional applications such as industrial UPS and welding.
In a discrete package, the 650V TRENCHSTOP IGBT7 H7 can deliver up to 150A. The portfolio includes 40A to 150A variants, offered in four different package types: TO-247-3 HCC, TO-247-4, TO-247-3 Plus and TO-247-4 Plus. The TO-247-3 HCC variant of the TRENCHSTOP IGBT 7 H7 features a high creepage distance.
To improve performance, 4-pin TO-247 packages (Standard: IKZA, Plus: IKY) are particularly suitable as they reduce switching losses and offer additional benefits – such as lower voltage overshoot, minimized conduction losses and lower rollback . current loss.
With these features, the TRENCHSTOP IGBT 7 H7 simplifies design and minimizes the need to connect devices in parallel.
Furthermore, the 650V TRENCHSTOP IGBT 7 H7 features robust moisture resistance for reliable operation in harsh environments. The device is qualified for industrial use according to the relevant tests of JEDEC47/20/22, especially HV-H3TRB, making it suitable for outdoor applications. Designed to meet the demand for green and efficient energy applications, IGBT offers significant improvements over previous generations.
The TRENCHSTOP IGBT 7 H7 is the ideal complement to the NPC1 topology frequently used in applications including solar and ESS.
