ICs de driver de porta EiceDRIVER 2EDN de próxima geração estabelecem nova referência para fator de forma

Next-Generation EiceDRIVER 2EDN Gate Driver ICs Set New Benchmark for Form Factor

Infineon Technologies is launching a new EiceDRIVER 2EDN product family. Targeting space-constrained designs, the next-generation devices complement existing 2EDN driver ICs, providing greater system-level efficiency, excellent power density, and consistent system robustness with fewer external components.

Building on this expansion, the 2EDN family can now boost power switching device performance in applications such as servers, telecommunications, DC-DC converters, industrial SMPS, electric vehicle charging stations, motor control, low-power light electric vehicles speed, power tools, LED lighting and solar energy systems.

The new EiceDRIVER 2EDN family is comprised of low-side, dual-channel 4A/5A gate-driver ICs. They target fast power MOSFETs and wideband switching devices (WBG). Gate drivers enable engineers to meet their design requirements across a range of package sizes, ensuring safe shutdown before undervoltage lockout (UVLO) and faster UVLO reaction for reliable operation and noise immunity.

The 14 new devices come in a wide variety of packaging. In addition to the popular 8-pin DSO, TSSOP and WSON package options that enable compatibility and out-of-the-box replacement, Infineon now offers the world's smallest 6-pin SOT23 package (2.8 x 2.9 mm 2 ) and TSNP package (1 .1 x 1.5 mm 2 ) variants.

The SOT23 and TSNP packages eliminate the enable signal (EN), which is often not used. As a result, they offer the ideal balance for space-constrained designs, leading to higher power density and greater on-board temperature cycling (TCoB) robustness.

Designers can choose between 4V and 8V UVLO options for instantaneous power switch protection under abnormal conditions. Essentially, the new products bring improved UVLO filtration time, faster wake-up from UVLO off status, and more than twice as fast UVLO reaction from startup and burst mode. Additionally, they feature accurate, high-precision rail-to-rail outputs and fast active output clamping at V DD = 1.2 V, typically clamping in just 20 ns for robustness.

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