Essential semiconductor specialist Nexperia has announced the latest additions to the Nexperia TrEOS portfolio, the PESD4V0Y1BBSF and PESD4V0X2UM extremely low clamp ESD protection diodes.
These devices combine high surge robustness with very low tripping and clamping voltages and wide passbands, providing exceptional levels of surge immunity, as demonstrated by their excellent IEC61000-4-5 ratings.
“Nexperia developed the TrEOS portfolio specifically to offer our customers a range of high-performance ESD protection solutions for applications such as USB3.2, USB4, Thunderbolt, HDMI 2.1 and Universal Flash,” said Stefan Seider, senior product manager at Nexperia.
Available in the low inductance DSN0603-2 package, the single-line PESD4V0Y1BBSF offers a 6.3V TLP trigger voltage combined with typical device robustness and capacitance of 25A 8/20µs and 0.7pF, respectively.
“The fast switching speeds of the PESD4V0Y1BBSF and PESD4V0X2UM provide extremely effective ESD surge suppression performance for high speed, while their low trigger voltage helps to significantly reduce the energy content of surge pulses IEC61000-4-5 8/20 µs,” Seider added.
The PESD4V0Y1BBSF offers a clamping voltage at 16 A 100 ns TLP of just 2.4 V, at 20 A 8/20 µs only 3.4 V appears. The two-line PESD4V0X2UM comes in the compact DFN1006-3 package and offers a voltage trigger voltage of 8 V, combined with a typical device robustness of over 14 A 8/20 µs with a typical device capacitance of 0.82 pF.
While both devices offer excellent protection for USB2.0 D+/D- lines, the PESD4V0Y1BBSF has an S21 passband greater than 7.5 GHz, making it suitable for USB3.x 5 Gbps. Both devices provide high levels of surge immunity, as demonstrated by their excellent IEC61000-4-5 ratings.
