Vishay Intertechnology has launched two new 30V dual n-channel symmetric power MOSFETs that combine high- and low-side TrenchFET Gen V MOSFETs in a single 3.3 x 3.3mm PowerPAIR 3x3FS package. For power conversion in computing and telecommunications applications, the Vishay Siliconix SiZF5300DT and SiZF5302DT increase efficiency while reducing component counts and simplifying designs.
Dual MOSFETs can be used in place of two discrete devices in the PowerPAK 1212 package – saving 50% board space – while offering 63% less space than the dual MOSFETs in the PowerPAIR 6x5F.
MOSFETs provide designers with space-saving solutions for synchronous buck converters, point-of-load (POL) conversion, and DC/DC modules in laptops with USB-C power delivery, servers, DC cooling fans, and telecommunications equipment.
In these applications, the SiZF5302DT's high- and low-side MOSFETs form an optimized combination for 50% duty cycles and best-in-class efficiency, in particular from 1 A to 4 A, while the SiZF5300DT provides an optimized combination for heavy loads in the 12 15 A range.
The SiZF5300DT and SiZF5302DT leverage Vishay's 30V Gen V technology for optimal resistance and gate loading. The SiZF5300DT provides a typical turn-on resistance of 2.02 mΩ at 10 V and 2.93 mΩ at 4.5 V, while the SiZF5302DT provides a typical turn-on resistance of 2.7 mΩ at 10 V and 4.4 mΩ at 4.5 v.
Typical gate charge for 4.5V MOSFETs is 9.5nC and 6.7nC, respectively. The resulting ultra-low resistance times gate charge – a key figure of merit (FOM) for MOSFETs used in power conversion applications – is 35% lower than previous generation solutions with similar resistance.
For high-frequency switching applications, the result is a 2% increase in efficiency, enabling 98% efficiency at 100 W.