Vishay Intertechnology has launched a new fourth-generation 600V EF-series fast body diode MOSFET in the low-profile PowerPAK 10 x 12 package.
Providing high efficiency and power density for telecommunications, industrial and computing applications, the Vishay Siliconix n-channel SiHK045N60EF reduces endurance by 29% compared to previous generation devices. It also offers a 60% lower gate fee.
This results in the industry's lowest gate load resistance times for devices in the same class, a key figure of merit (FOM) for 600V MOSFETs used in power conversion applications.
Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high-voltage inputs to the low-voltage outputs needed to power the latest high-tech equipment.
With the SiHK045N60EF and other devices in the fourth-generation 600V EF series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture – power factor correction without totem bridge (PFC) and subsequent DC/DC converter blocks.
Typical applications will include:
- Edge computing and data storage
- UPS
- High Intensity Discharge (HID) Lamps and Fluorescent Ballast Lighting
- Solar Inverters
- Welding equipment
- Induction heating
- Motor drives
- Battery Chargers
Built on Vishay's latest energy-efficient E-Series superjunction technology, the SiHK045N60EF's typical low resistance of 0.045 Ω at 10 V is 27% lower than devices in the PowerPAK 8 x 8 package. higher rating for applications ≥ 3 kW, while the device's low 2.3 mm profile increases power density. Additionally, the MOSFET offers ultra-low gate charging of up to 70 nC.
The resulting FOM of 3.15 Ω*nC is 2.27% lower than the closest competing MOSFET in the same class, which translates into reduced conduction and switching losses to save power and increase efficiency. This allows the device to meet the specific efficiency requirements of titanium in server power supplies or achieve 98% maximum efficiency in telecommunications power supplies.
To improve switching performance in zero voltage switching (ZVS) topologies such as LLC resonant converters, the SiHK045N60EF provides low effective output capacitances Co(er) and Co(tr) of 171 pf and 1069 pF, respectively. The device's Co(tr) is 8.79% lower than the closest competing MOSFET in the same class, while its fast body diode provides a low Qrr of 0.8 μC for greater reliability in bridge topologies.
Additionally, with a maximum junction-to-case thermal resistance rating of 0.45°C/W, the PowerPAK 10 x 12 MOSFET package offers the best thermal capacity of any surface mount package. Compared to PowerPAK 8 x 8 devices, the SiHK045N60EF offers 31% lower thermal impedance.
Designed to withstand avalanche mode overvoltage transients with limits guaranteed through 100% UIS testing, the MOSFET is RoHS compliant, halogen-free and Vishay Green.
