Taiwan Semiconductor introduces new 40V PerFET (NH Series) power MOSFETs with a PDFN33 package.
The new MOSFETs are built on proprietary device structures and processes that enable exceptionally low on-state resistance and switching figure of merit (FOM – R*Q). Achieving 35% FOM reduction compared to previous technology (NB Series) puts this portfolio at the top of performance.
The RDS(on) value at temperatures (-55° to 150° C) shows less variation due to the lower temperature coefficient (K). This 40V N-channel starter platform includes options for standard (10V) and logic-level (5V) gate drive requirements while preserving a robust, safe-operating endurance for switching voltage transients and power issues. avalanche in switching applications.
Characteristics
• Ultra-low resistance
• 100% UIS and Rg tested
• RoHS Compliant
• Halogen-free, in accordance with IEC 61249-2-21
Forms
• SMPS
• DC-DC Converters
• Server and telecommunications
• Drivers
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