STMicroelectronics has released two STPOWER modules that contain 1200V silicon carbide (SiC) MOSFETs in popular configurations. Each uses ST's ACEPACK 2 package technology to ensure high power density and simplified assembly.
The first of the new modules, the A2F12M12W2-F1, is a four-unit module that provides a convenient and compact full-bridge solution for circuits such as DC/DC converters.
Another module, the A2U12M12W2-F2, employs a three-level T-type topology to combine high conduction and switching efficiency with consistent output voltage quality.
The MOSFETs in these modules leverage ST's second-generation SiC technology, which has an excellent RDS(on) x die area value of merit to ensure high current handling capability with minimal losses. With typical RDS(on) of 13mΩ per die, full-bridge and T-type topologies serve high-power applications and ensure excellent power efficiency with simplified thermal management due to low dissipation.
The ACEPACK 2 package has compact dimensions and guarantees high power density, with an efficient alumina substrate and direct bonded copper (DBC) matrix attachment. External connections are press-fit pins that simplify mounting on equipment for potentially harsh environments such as electric vehicles (EVs) and power conversion for charging stations, energy storage and solar power. The package provides 2.5 kVrms isolation and contains an integrated NTC temperature sensor that can be used for system protection and diagnostics.