STMicroelectronics STPOWER MDmesh M9 and DM9 N-Channel Superjunction , Multi-drain silicon power MOSFETs are ideal for switched-mode power supplies (SMPS) in applications ranging from data center servers and 5G infrastructure to flat-panel televisions.
The first devices to be launched are the 650V STP65N045M9 and the 600V STP60N043DM9. Both have low resistance (RDS(on)) per unit area, which maximizes power density and allows for compact system dimensions. Each has the best maximum RDS(on) (RDS(on)max) in its class, 45mΩ for the STP65N045M9 and 43mΩ for the STP60N043DM9.
With an extremely low gate charge (Qg) – typically 80nC at a drain voltage of 400V – these devices have the best RDS(on)max x Qg figure of merit (FoM) currently available.
The gate threshold voltage (VGS(th)) – typically 3.7V for the STP65N045M9 and 4.0V for the STP60N043DM9 – minimizes on and off switching losses compared to the previous MDmesh M5 and M6/DM6. The MDmesh M9 and DM9 series also feature a very low reverse recovery charge (Qrr) and reverse recovery time (trr), which further contributes to improved switching efficiency and performance.
A further feature of ST's latest high-voltage MDmesh technologies is an additional platinum diffusion process that ensures a fast intrinsic body diode. The diode recovery peak slope (dv/dt) is greater than in previous processes.
All devices belonging to MDmesh DM9 technology are extremely robust and can support dv/dt up to 120V/ns to 400V.