STMicroelectronics construindo uma fábrica de substrato de carboneto de silício na Itália

STMicroelectronics building a silicon carbide substrate factory in Italy

STMicroelectronics, a global semiconductor supplier serving customers across the spectrum of electronics applications, will build an integrated silicon carbide (SiC) substrate manufacturing facility in Italy to meet ST's customers' growing demand for SiC devices in applications automotive and industrial sectors as they transition to electrification and seek greater efficiency.

STMicroelectronics will build an integrated silicon carbide substrate manufacturing facility in Italy to meet growing demand for SiC devices.

Production is expected to begin in 2023, enabling a balanced supply of SiC substrate between domestic and commercial supply.

The SiC substrate manufacturing facility, built at the ST facility in Catania, Italy, together with the existing SiC device manufacturing facility, will be the first of its kind in Europe for the volume production of epitaxial SiC substrates of 150 mm, integrating all stages of production. flow. ST is committed to developing 200mm wafers in the near future.

This project is a fundamental step in advancing ST's vertical integration strategy for its SiC business. The investment of 730 million euros over five years will be financially supported by the Italian State under the National Recovery and Resilience Plan and will create around 700 additional direct jobs during full construction.

“ST is transforming its global manufacturing operations with additional capacity in 300mm manufacturing and a strong focus on broadband semiconductors to support its $20 billion+ revenue ambition. We are expanding our operations in Catania, the center of our power semiconductor expertise and where we already integrate SiC research, development and manufacturing with strong collaboration with Italian research entities, universities and suppliers,” said Jean-Marc Chery, President and CEO from STMicroelectronics. “This new facility will be critical to our vertical integration into SiC, bolstering our SiC substrate supply as we further increase volumes to support our automotive and industrial customers in their shift to electrification and greater efficiency.”

ST's leadership in SiC is the result of 25 years of focus and commitment to R&D with a large portfolio of important patents. Catania has long been an important innovation location for ST, as home to the largest SiC research and development and manufacturing operations, successfully contributing to the development of new solutions for producing more and better SiC devices.

With an established ecosystem in power electronics, including a successful and long-term collaboration between ST and different stakeholders (the University, the CNR (Italian National Research Council), companies involved in manufacturing equipment and products), as well As a large supplier network, this investment will strengthen Catania's role as a global competence center for silicon carbide technology and new growth opportunities.

ST's high-volume STPOWER SiC products are currently manufactured at its factories in Catania and Ang Mo Kio (Singapore). Assembly and testing is done at back-end locations in Shenzhen (China) and Bouskoura (Morocco). The investment in this SiC substrate manufacturing facility builds on this experience and is a significant milestone on ST's path to achieving 40% in-house substrate supply by 2024.

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