STMicroelectronics, a global semiconductor supplier serving customers across the spectrum of electronics applications, has launched high-power modules for electric vehicles that increase performance and range. ST's new silicon carbide (SiC) power modules have been selected for Hyundai's E-GMP electric vehicle (EV) platform, shared by the KIA EV6 and several models.
Five new SiC-MOSFET-based power modules offer flexible options for vehicle manufacturers, spanning a selection of power ratings and support for operating voltages commonly used in EV drivetrain applications.
Housed in ST's ACEPACK DRIVE package optimized for traction applications, the power modules are reliable – thanks to sintering technology, reliable and easy for manufacturers to integrate into EV drives. Internally, the key power semiconductors are ST's third-generation (Gen3) STPOWER SiC MOSFETs, which combine the industry's highest figure of merit (RDS(ON) x die area) with very low switching power and super performance at synchronous rectification.
“ST silicon carbide solutions are enabling leading automotive OEMs to set the pace for electrification in the development of future generations of electric vehicles,” said Marco Monti, president of the Automotive and Discreet Group at STMicroelectronics. “Our third-generation SiC technology ensures the highest power density and energy efficiency, resulting in superior vehicle performance, range and charging time.”
A supplier to the automotive electric vehicle market, Hyundai Motor Company has chosen ST's ACEPACK DRIVE SiC-MOSFET Gen3 power modules for its current-generation EV platform, called E-GMP. In particular, the modules will power the Kia EV6.
“ST’s SiC-MOSFET-based power modules are the right choice for our traction inverters, enabling greater range. The cooperation between our two companies has taken a significant step towards more sustainable electric vehicles, leveraging ST's continued technological investment to be the leading semiconductor player in the electrification revolution,” said Sang-Cheol Shin, engineering design team of inverters from Hyundai Motor Group.
As the industry leader in this technology, ST has already supplied STPOWER SiC devices to more than three million mass-produced passenger cars worldwide. Compared to conventional silicon power semiconductors, smaller SiC devices can handle higher operating voltages that enable faster charging and superior vehicle dynamics. Energy efficiency is also increased, which increases range, and reliability can be increased.
SiC is gaining mass adoption in various EV systems such as DC-DC converter, traction inverter and on-board chargers (OBC) with bi-directional operation ready to transfer power from vehicle to grid. ST's SiC strategy, as an integrated device manufacturer (IDM), ensures quality and security of supply to meet automakers' electrification strategies.
With the recently announced fully integrated SiC substrate manufacturing facility in Catania, expected to start production in 2023, ST is moving quickly to support the rapid market transition towards electric mobility.