Infineon Technologies has added HYPERRAM 3.0 to its portfolio of high-bandwidth, low-pin-count memory solutions. The device features a new extended 16-bit version of the HyperBus interface that doubles transfer rate to 800 MBps.
With HYPERRAM 3.0, Infineon offers a portfolio of high-bandwidth memories with low pin counts and low power consumption. It is ideal for applications that require RAM expansion, including video buffering, factory automation, artificial intelligence of things (AIoT), and automotive vehicle-to-everything (V2X), as well as applications that require scratch pad memory for intense math calculations .
“With nearly three decades of knowledge in memory solutions, we are excited to bring another industry first to the market. The new HYPERRAM 3.0 memory solutions achieve much higher yield per pin than existing technologies on the market such as PSRAMs and SDR DRAMs,” said Ramesh Chettuvetty, senior director of Applications and Marketing, Automotive Division, Infineon. “Our low power features enable better power consumption without sacrificing throughput, which also makes this memory ideal for industrial and IoT solutions.”
Infineon's HYPERRAM is a PSRAM-based independent volatile memory that offers a simple and cost-effective way to add extension memory. Data rates are equivalent to SDR DRAM, but with much lower pin counts and lower power requirements. The increased data transfer rate per pin of the HyperBus interface makes it possible to use microcontrollers (MCUs) with fewer pins and PCBs with fewer layers.
This provides opportunities for lower complexity and therefore cost-optimized designs to support specific applications.
