Nexperia oferece novos diodos de proteção ESD de capacitância ultrabaixa

Nexperia offers new ultra-low capacitance ESD protection diodes

Critical semiconductor specialist Nexperia has announced an extension to its portfolio of ultra-low capacitance ESD protection diodes designed to protect high-speed data lines on interfaces such as USB, HDMI, high-speed video links and Ethernet in infotainment applications automotive. .

These latest additions include PESD18VF1BLS-Q, PESD24VF1BLS-Q, PESD30VF1BLS-Q and PESD32VF1BLS-Q in the DFN1006BD-2 package, enabling optical inspection on automotive production lines using wettable side flanks.

Additionally, PESD18VF1BBL-Q, PESD24VF1BBL-Q and PESD30VF1BBL-Q are available in the DFN1006-2 compact package. All variants are in lead-free packaging to improve electrical performance and signal integrity while enabling miniaturization in automotive designs.

Electrostatic discharge diodes (ESD) protect critical electronic systems and subsystems by dissipating the high energy of electrostatic discharges. This protects vital SOCs (system on chip) and other components from damage during an ESD event. Adding additional components to a high-speed data line may deteriorate the signal integrity of the transferred data.

Therefore, choosing the right components that protect the system but do not harm signal transmission is vital for modern high-speed automotive systems.

Nexperia has long experience in being a market leader and offering the best ESD protection solutions. Keeping in mind the needs of design engineers as well as automotive systems, Nexperia is offering this portfolio with best-in-class signal integrity performance made possible by the device's ultra-low capacitance (as low as a typical 0.28 pF) combined with the highest insulation voltage of 18-32V for placement closer to the connector.

For maximum design flexibility, these diodes are offered with and without side-wettable flanks, with the side-wettable flanks enabling automated optical inspection (AOI).

These AEC-Q101 automotive-qualified devices exhibit extremely deep snapback behavior combined with a low dynamic resistance of 0.8Ω for improved system-level robustness and clamping performance on high-speed data interfaces.

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