Innoscience Technology has launched a new 100V bidirectional member of the company's VGaN IC family. The first family of 40V rated VGaN devices with a wide resistance range (1.2 mOhm – 12 mOhm) has been successfully deployed in the USB OVP of mobile phones such as OPPO, OnePlus, etc.
The new 100V VGaN (INV100FQ030A) can be employed to achieve high efficiency in 48V or 60V battery management systems (BMS), as well as for high load switching applications in bi-directional converters, switching circuits in power systems and others fields. Such devices are ideal for applications such as home batteries, portable charging stations, e-scooters, e-bikes, etc.
One VGaN replaces two back-to-back Si MOSFETs; they are connected with a common drain to achieve bi-directional switching of battery charge and discharge, further reducing resistance and loss significantly over traditional silicon solutions. BOM count, PCB space and costs are also reduced accordingly.
The INV100FQ030A 100V VGaN IC supports bi-directional pass, bi-directional cut and non-reverse recovery modes of operation. The devices feature an extremely low gate charge of just 90nC, ultra-low dynamic resistance of 3.2mΩ, and a small package size of 4x6mm.
Innoscience's 100V GaN series products are in mass production in En-FCQFN (exposed top cooling) and FCQFN packaging.
