KG has expanded its high-power Prime Switch family with the new Press Pack IGBT (PPI) with internal free-wheeling diodes (FWD) in ceramic disc housings.
This PPI is designed specifically for transmission and distribution applications and is ideal for high current modular multilevel converters (MMC), medium voltage drives, DC circuit breakers, wind turbine converters and traction systems.
The Prime Switch IGBT features blocking voltage of 4.5 kV at 3000 A without FWD and 2000 A with FWD. Adapting to the 3000 A PPI, Infineon offers external freewheeling diodes in four different silicon diameters, including the D1600U45X122, D2700U45X122, D3900U45X172, and the D4600U45X172.
High-voltage chip-trench IGBT technology combined with high-reliability press-pack technology, field-proven for over 40 years, provides customers with an excellent, high-performance solution for ultra-high power applications. Furthermore, the devices open new opportunities to optimize high-power applications in terms of losses, reliability and cost.
The PPI housing is hermetically sealed and specifically designed to resist system-induced failures. In this way, PPI provides extremely robust burst resistance of the casing as well as a “short-to-fail” capability. To cover numerous applications and power ranges, the innovative design of the internal chip set and housing allows Infineon to create an optimal tuning portfolio with different current values and topologies.
The Prime Switch IGBT can be pre-ordered now. The next expansion of the new Prime Switch family portfolio is scheduled for mid/late 2022.