Infineon Technologies AG has successfully integrated CoolGaN 600V hybrid drain-embedded gate injection transistor (HD-GIT) technology into its in-house manufacturing. The company is now releasing the full portfolio of its high-quality GaN devices to the broader market.
Leveraging Infineon's fully owned and controlled supply chain, the expanded GaN portfolio includes a broad range of discrete and fully integrated GaN devices that far exceed JEDEC lifetime requirements.
The new CoolGaN devices have been optimized for a variety of applications, from industrial SMPS for servers, telecommunications and solar to consumer applications – such as chargers and adapters, motor drives, TV/monitor and LED lighting systems.
The CoolGaN portfolio of discrete and integrated power stage (IPS) devices provides designers with the flexibility needed to meet their specific industrial application needs, in compliance with JEDEC standards (JESD47 and JESD22). Discrete CoolGaN GIT HEMT devices are available in DSO-20-85, DSO-20-87, HSOF-8-3, LSON-81- and TSON-8 packages and in multiple on-state resistances (R DS(on),max . ) values ranging from 42 to 340 mΩ.
IPS solutions come in the form of half-bridge and single-channel devices. The half-bridge solutions integrate two GaN switches and are housed in a TIQFN-28 package with R DS(on),max. values of (2x) 190-650 mΩ. Single channel solutions are available in a thermally enhanced TIQFN-21 package with R DS(on),max. values in the range of 130-340 mΩ.
Infineon's CoolGaN GIT technology features a unique combination of a robust gate structure, internal electrostatic discharge (ESD) protection, and excellent dynamic RDS (enabled) performance. It fully exploits the intrinsic properties of GaN to provide exceptional values of merit (FoM) compared to Si technology, such as ten times higher breakdown field, two times higher electron mobility, ten times lower output charge, reverse recovery charge zero and ten times lower gate load with linear output capacitance ( CSS ).
These technical features provide significant design advantages, such as very low R DS(on), higher efficiency in resonant circuits, use of new topologies and current modulation, as well as fast and almost lossless switching.
Infineon's line of CoolGaN 600V GIT discrete devices includes JEDEC compliant top and bottom cooled packages (TSC/BSC). CoolGaN TSC power packs are unique on the market and meet higher power requirements. The benefits for designers are multiple, resulting in compact, lightweight products with high power density, greater energy efficiency and reduced total system costs.
Infineon's commitment to quality standards ensures long-term reliability while reducing operating and maintenance costs for high-power applications.