The increasing demand for high power density is driving developers to adopt 1500 V DC link in their applications to increase the rated power per inverter and reduce system costs. However, 1500 V DC V-based systems also present more challenges in system design, such as fast switching at high DC voltage, which typically requires a multilevel topology.
This leads to a complicated design and a relatively high number of components.
To address this challenge, Infineon Technologies introduced its expanded CoolSiC portfolio with high-voltage solutions to provide the foundation for next-generation photovoltaics, electric vehicle charging and energy storage systems.
The extended CoolSiC portfolio offers 2 kV silicon carbide (SiC) MOSFETs along with a 2 kV SiC diode for applications up to 1500 VDC . The new SiC MOSFET combines low switching losses and high blocking voltage in a device that can ideally meet the requirements of 1500 V DC systems.
The new 2 kV CoolSiC technology offers a low source drain resistance (R DS(on) ) value. Furthermore, the robust body diode is suitable for rigid switching. The technology allows sufficient overvoltage margin and offers ten times lower FIT rate caused by cosmic rays, compared to 1700 V SiC MOSFETs. Furthermore, the extended gate voltage operating range makes the devices easy to use.
This new SiC MOSFET chip is based on Infineon's advanced SiC MOSFET technology called M1H, which was recently launched. Newer advances allow for a significantly larger gate voltage window that improves endurance for a given die size.
Simultaneously, the larger gate voltage window provides high robustness against driver- and layout-related voltage spikes in the gate without any restrictions even at high switching frequencies. Infineon offers a line of EiceDRIVER gate drivers with functional isolation up to 2.3 kV to support 2 kV SiC MOSFETs.
