Power semiconductors based on silicon carbide (SiC) offer several advantages such as high efficiency, power density, voltage resistance and reliability. This creates opportunities for new applications and improved technological innovations in charging stations.
Infineon Technologies announced a collaboration with Infypower, a Chinese new energy vehicle charging provider. Infineon will supply INFY with industry-leading 1200V CoolSiC MOSFET power semiconductor devices to improve the efficiency of electric vehicle charging stations.
“The collaboration between Infineon and Infypower in the area of electric vehicle (EV) charging solutions provides an excellent system-level technological solution for the local EV charging station industry,” said Dr. Peter Wawer, President of Infineon's green industrial energy division. . “This will significantly improve charging efficiency, accelerate charging speeds and create a better user experience for electric car owners.”
The high power density of SiC enables the development of compact, lightweight and high-performance chargers, especially for supercharging stations and ultra-compact wall-mounted DC charging stations.
Compared to traditional silicon-based solutions, SiC technology in electric vehicle charging stations can increase efficiency by one percent, reducing energy losses and operating costs. At a 100 kW charging station, this translates into an electricity saving of 1 kWh, saving 270 euros annually and reducing carbon emissions by 3.5 tonnes. This drives the growing adoption of SiC power devices in EV charging modules.
“With Infineon's 20+ years of continuous advancement in SiC product offering and the strength of integrated technology, Infypower can consolidate and maintain its outstanding technological position in the industry by adopting state-of-the-art product processes and design solutions. ,” said Qiu Tianquan, president of Infypower China. “We can also set a new standard for the charging efficiency of DC chargers for new energy vehicles. As a result, customers can enjoy more convenience and unique value, promoting the healthy development of the electric vehicle charging industry.”
As one of the first SiC power semiconductor manufacturers to use trench gate technology for transistors, Infineon has introduced an advanced design that provides high reliability for chargers. The devices offer a high voltage threshold and simplified gate actuation. The CoolSiC MOSFET technology has undergone marathon stress testing and gate voltage jump stress testing before commercial release and regularly thereafter in the form of monitoring to ensure the highest gate reliability.
By integrating Infineon's 1200V CoolSiC MOSFETs, Infypower's 30kW DC charging module offers a wide range of constant power, high power density, minimal electromagnetic radiation and interference, high protection performance and high reliability. In this way, it is suitable for the fast charging demand of most EVs, while also having a 1 percent higher efficiency compared to other solutions on the market. Consequently, significant energy savings and globally leading reductions in carbon dioxide emissions are achieved.