As digitalization, urbanization and the rise of electromobility continue to shape the rapidly evolving world, demand for energy consumption is reaching unprecedented levels. Recognizing energy efficiency as a key concern, Infineon Technologies addresses these megatrends with its CoolSiC 650V silicon carbide (SiC) MOSFET in TO leadless (TOLL) packaging.
The new SiC MOSFETs are enhancing Infineon's comprehensive CoolSiC portfolio and are optimized for lower losses, greater reliability and ease of use in applications such as SMPS for servers, telecommunications infrastructure, as well as energy storage systems and battery formation solutions. .
The CoolSiC 650V high-performance trench-based SiC power MOSFETs are offered in a very granular portfolio to better suit different target applications.
The new family comes in a JEDEC-qualified TOLL package with low parasitic inductance, enabling higher switching frequency, reduced switching losses, good thermal management and automated assembly. The compact form factor enables efficient and effective use of board space, enabling system designers to achieve exceptional power density.
CoolSiC 650 V MOSFETs exhibit remarkable reliability even in harsh environments, making them an ideal choice for topologies with difficult and repetitive switching. The inclusion of the innovative .XT interconnect technology further improves the thermal performance of devices, reducing thermal resistance ( Rº ) and thermal impedance ( Zº ).
Additionally, the new devices feature a gate threshold voltage (V GS(º) ) greater than 4 V for robustness against parasitic activation, a robust body diode, and the strongest gate oxide (GOX) on the market, resulting in of extremely low FIT (time failures).
While a cutoff voltage (V GS(off) ) of 0 V is generally recommended to simplify the drive circuit (unipolar drive), the new portfolio supports a wide range of V GS drive voltage within the -5 V range ( off) at 23 V (on). This ensures ease of use and compatibility with other standard SiC MOSFETs and MOSFET gate driver ICs. This is combined with increased reliability, reduced system complexity and enabling automated assembly, reducing system and production costs and accelerating time to market.
