Inoscience announced new, low R DS(on) , high power devices in its growing family of 650V/700V enhancement mode power transistors. New 30, 50 and 70mΩ R ON parts are available in the package TOLL (TO-Leadless) industry standard. The 70 mΩ part is also available as an 8×8 DFN part.
Members of a new high-power product platform from Innoscience, the new INN650TA0x0AH and INN650DA070AH (DFN) devices address challenges across multiple market sectors. For example, with silicon technology, it is difficult to achieve the latest efficiency standards while maintaining a small PSU size. An Innoscience demonstration based on the INN650TA030AH 650V/30mΩ GaN transistor shows a 4.2 kW PFC Totem Pole design that easily meets 80+ Titanium Plus specifications. Power-hungry data centers now require 1-2 kW/rack. Using its new HEMTs, Innoscience demonstrated a 4.2 kW PSU with a power density of 130 W/in 3 that meets more than 80 Titanium Plus ratings. For comparison, a well-known supplier of power supplies for such applications using silicon devices is quoting 46W/in. 3 which would result in a 40% larger unit.
