EPC introduces the EPC2361 100V, 1mOhm GaN FET in a compact 3mm x 5mm QFN package, offering increased power density for DC-DC conversion, fast charging, motor drives and solar MPPTs.
EPC, the world leader in enhancement mode gallium nitride (GaN) FETs and power ICs, launches the 100V, 1mOhm EPC2361. This is the lowest resistance GaN FET on the market, offering twice the power density compared to EPC's previous generation products.
The EPC2361 has a typical R DS(on) of just 1 mOhm in a thermally enhanced QFN package with an exposed top and a small 3mm x 5mm footprint. Maximum OR DS(on) x The area of the EPC2361 is 15 mΩ*mm 2 — more than five times smaller than comparable 100 V silicon MOSFETs.
With its ultra-low resistance, EPC2361 enables greater power density and efficiency in power conversion systems, leading to reduced power consumption and heat dissipation. This advancement is particularly significant for applications such as AC-DC synchronous rectification of high-power power supplies, high-frequency DC-DC conversion for data centers, motor drives for mobility, robotics, drones and solar MPPTs.
“Our new 1 mΩ GaN FET continues to push the limits of what is possible with GaN technology, empowering our customers to create more efficient, compact and reliable power electronics systems,” comments Alex Lidow, CEO and co-founder of EPC.
Development Framework
The EPC90156 development board is a half-bridge with the EPC2361 GaN FET. It is designed for maximum device voltage of 100 V and maximum output current of xx A. The purpose of this advice is to simplify the evaluation process for power system designers to accelerate time to market for their products. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.
Price and availability
The EPC2361 costs $4.60 each in 3 Ku volumes.
The EPC90156 development board costs $200 each.
The product is available through any of EPC's distribution partners or can be ordered directly from the EPC website.
Designers interested in replacing their silicon MOSFETs with a GaN solution can use the EPC GaN Power Bench cross-reference tool to find a suggested replacement based on their unique operating conditions. The cross-reference tool can be found here.
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